The European Physical Journal Applied Physics (EPJ AP)

Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

R. A. Ismail, O. A. Abdulrazaq, A. A. Hadi and O. A. Hamadi

Eur. Phys. J. Appl. Phys., 38 3 (2007) 197-201

Published online: 31 January 2007

DOI: 10.1051/epjap:2007028

R. A. Ismail

O. A. Abdulrazaq

A. A. Hadi

O. A. Hamadi

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