The European Physical Journal Applied Physics (EPJ AP)

Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing

D. Klinger, J. Auleytner, D. Żymierska, B. Kozankiewicz, A. Barcz, L. Nowicki and A. Stonert

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 149-153

Published online: 15 July 2004

DOI: 10.1051/epjap:2004133

D. Klinger

J. Auleytner

D. Żymierska

B. Kozankiewicz

A. Barcz

L. Nowicki

A. Stonert

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