The European Physical Journal Applied Physics (EPJ AP)

Journals
Books
Conferences

0

Subscriber Authentication Point

Sign in with login/password
Your subscription

EDPS Account

Login

All issues
Topical issues
Accepted manuscripts
Reviews
About

Search

Menu

Browse
About the journal
Author information
Submit your paper
Subscriber information
Reader's services
News
Events

Advanced Search

Search

Browse
About the journal
Author information
Submit your paper
Subscriber information
Reader's services
News
Events

Advanced Search
Help

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Zs. J. Horváth, L. K. Orlov, V. Rakovics, N. L. Ivina, A. L. Tóth, E. S. Demidov, F. Riesz, V. I. Vdovin and Z. Pászti

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 189-192

Published online: 15 July 2004

DOI: 10.1051/epjap:2004106

This search tool will display articles in Google Scholar database by authors of the selected article:

Select your author(s):

Zs. J. Horváth

L. K. Orlov

V. Rakovics

N. L. Ivina

A. L. Tóth

E. S. Demidov

F. Riesz

V. I. Vdovin

Z. Pászti

Select all
Remove all

Search method:

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)

The European Physical Journal Applied Physics (EPJ AP)

Editors-in-Chief: Vincent Mauchamp and Philippe Moreau - Editorial board
ISSN: 1286-0042 - eISSN: 1286-0050
Frequency: monthly
Copyright / Published by: EDP Sciences

Mentions légales
Contacts
Privacy policy

A Vision4Press website