The European Physical Journal Applied Physics (EPJ AP)

Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy

L. Beji, A. Rebey and B. El Jani

Eur. Phys. J. AP, 4 3 (1998) 269-273

Published online: 15 December 1998

DOI: 10.1051/epjap:1998270

L. Beji

A. Rebey

B. El Jani

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