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The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects

L. Kaabi, J. Ben Brahim, B. Remaki, C. Gontrand, H. El Omari, J.-C. Bureau, Z. Sassi and B. Balland

Eur. Phys. J. AP, 3 1 (1998) 49-52

Published online: 15 July 1998

DOI: 10.1051/epjap:1998203

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The European Physical Journal Applied Physics (EPJ AP)

Editors-in-Chief: Vincent Mauchamp and Philippe Moreau - Editorial board
ISSN: 1286-0042 - eISSN: 1286-0050
Frequency: monthly
Copyright / Published by: EDP Sciences

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