The European Physical Journal Applied Physics (EPJ AP)

InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer

J.-H. Tsai, Y.-H. Lee, N.-F. Dale and W.-S. Lour

Eur. Phys. J. Appl. Phys., 48 2 (2009) 20303

Published online: 02 October 2009

DOI: 10.1051/epjap/2009161

J.-H. Tsai

Y.-H. Lee

N.-F. Dale

W.-S. Lour

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