Eur. Phys. J. Appl. Phys.
Volume 48, Number 2, November 2009
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||02 October 2009|
InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer
Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan
2 Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan
Corresponding author: firstname.lastname@example.org
Revised: 22 June 2009
Accepted: 28 July 2009
Published online: 2 October 2009
In this paper, we first fabricate and demonstrate the InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic heavy-doped channel. Due to the large gate potential barrier for the use of the n+-GaAs/p+-InGaP/n-GaAs camel-like gate and the thin as well as heavy doping n+-InGaAs channel layer, the effective conduction band discontinuity is substantially extended and a high gate turn-on voltage up to 2.0 V is obtained. The device exhibits a relatively broad gate voltage swing resulting from the high gate turn-on voltage. In addition, a maximum drain current of 393 mA/mm and a maximum transconductance of 96 mS/mm are measured. These results indicate that the studied device is suitable for signal amplifier and linear circuit applications.
PACS: 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 73.61.Ey – III-V semiconductors / 73.63.Hs – Quantum wells
© EDP Sciences, 2009
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