Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damagesM. Mosca, A. Castiglia, H.-J. Bühlmann, J. Dorsaz, E. Feltin, J.-F. Carlin and N. GrandjeanEur. Phys. J. Appl. Phys., 43 1 (2008) 51-53DOI: https://doi.org/10.1051/epjap:2008119
