| Issue |
Eur. Phys. J. Appl. Phys.
Volume 43, Number 1, July 2008
|
|
|---|---|---|
| Page(s) | 51 - 53 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2008119 | |
| Published online | 19 June 2008 | |
https://doi.org/10.1051/epjap:2008119
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
Corresponding author: mosca@dieet.unipa.it
Received:
9
May
2008
Accepted:
23
May
2008
Published online:
19
June
2008
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH:ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
PACS: 78.66.Fd – III-V semiconductors / 85.60.Jb – Light-emitting devices / 81.65.Cf – Surface cleaning, etching, patterning
© EDP Sciences, 2008
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.