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Cited article:

(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness

J. Laifi and A. Bchetnia
Journal of Materials Science: Materials in Electronics 33 (10) 7587 (2022)
https://doi.org/10.1007/s10854-022-07905-7

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

S. Gautier, G. Orsal, T. Moudakir, et al.
Journal of Crystal Growth 312 (5) 641 (2010)
https://doi.org/10.1016/j.jcrysgro.2009.11.040