Structural and morphological studies of GaN thin films grown on different oriented LiNbO₃ substrates by MOVPE

¹ Laboratoire Matériaux Optiques, Photonique et Systèmes, UMR CNRS 7132, University of Metz and Supélec, 2 rue E. Belin, 57070 Metz, France
² Laboratoire d'Étude des Textures et Application aux Matériaux, UMR CNRS 7078, University of Metz, ISGMP, Île du Saulcy, 57045 Metz, France
³ Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102, USA
⁴ Georgia Institute of Technology/GTL, UMI 2958 GT-CNRS, 2-3 rue Marconi, 57070 Metz, France

Corresponding author: orsal@metz.supelec.fr

Received: 28 November 2007
Revised: 13 June 2008
Accepted: 23 June 2008
Published online: 25 July 2008

Abstract

GaN epilayers were grown by metal-organic vapor phase epitaxy (MOVPE) on z- and x-cut lithium niobate substrates. Ex-situ characterizations of the epilayers by means of scanning electron microscope, atomic force microscope, X-ray diffraction and micro-Raman scattering measurements have revealed same growth features on both substrates. The observation of the morphology shows homogeneous and relatively smooth surface. The shape and density of GaN islands as well as the observed columnar growth mode are not dependent of the orientation of the LN substrates. The X-ray diffraction analysis of 450 nm thick GaN layers grown at 730 °C on z- and x-cuts showed that both GaN layers reveal the same crystallographic orientation, i.e. c-axis orientation normal to the substrate plane and in-plane orientation that coincides with the primary axis of LN substrates. The Raman scattering measurements confirm the growth of an oriented epitaxial GaN layer on LN substrate. Moreover, the deposited layer exhibit a quite good homogeneity, since the Raman spectra recorded for different positions in the layer do not reveal any significant variations in their relative intensities and frequency shifts.