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Cited article:
R. Bourguiga, A. Oudir, M. Mahdouani, F. Pardo, J. L. Pelouard
Eur. Phys. J. Appl. Phys., 42 3 (2008) 177-186
Published online: 2008-04-30
This article has been cited by the following article(s):
Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on $S$ -Parameters Measured at Normal Bias Conditions
A. Oudir, M. Mahdouani and R. Bourguiga
IEEE Transactions on Microwave Theory and Techniques 59 (8) 1973 (2011)
DOI: 10.1109/TMTT.2011.2158441
See this article
Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base
A. Oudir, M. Mahdouani, S. Mansouri, et al.
Solid-State Electronics 54 (1) 67 (2010)
DOI: 10.1016/j.sse.2009.09.024
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An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters
A. Oudir, M. Mahdouani, R. Bourguiga, F. Pardo and J.L. Pelouard
Solid-State Electronics 52 (11) 1742 (2008)
DOI: 10.1016/j.sse.2008.07.004
See this article