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Cited article:

Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit

R. Bourguiga, A. Oudir, M. Mahdouani, F. Pardo, J. L. Pelouard

Eur. Phys. J. Appl. Phys., 42 3 (2008) 177-186

Published online: 2008-04-30

DOI: https://doi.org/10.1051/epjap:2008066

This article has been cited by the following article(s):

Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on $S$-Parameters Measured at Normal Bias Conditions

A. Oudir, M. Mahdouani and R. Bourguiga
IEEE Transactions on Microwave Theory and Techniques 59 (8) 1973 (2011)
https://doi.org/10.1109/TMTT.2011.2158441

Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base

A. Oudir, M. Mahdouani, S. Mansouri, et al.
Solid-State Electronics 54 (1) 67 (2010)
https://doi.org/10.1016/j.sse.2009.09.024

An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters

A. Oudir, M. Mahdouani, R. Bourguiga, F. Pardo and J.L. Pelouard
Solid-State Electronics 52 (11) 1742 (2008)
https://doi.org/10.1016/j.sse.2008.07.004