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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Min-Kyu Joo, Junghwan Huh, Mireille Mouis, et al.
Applied Physics Letters 102 (5) 053114 (2013)
DOI: 10.1063/1.4788708
See this article