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Cited article:

The electronic structures and predominant thermoelectric performance of the twisted InSb/Graphene bilayer

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Wet chemical etching of the (111)In and % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXgatC % vAUfeBSjuyZL2yd9gzLbvyNv2CaeHbd9wDYLwzYbItLDharyavP1wz % ZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC0xbb % L8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yqaqpe % pae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabeqaam % aaeaqbaaGcbaWaaeWaaeaacuaIXaqmgaqeaiqbigdaXyaaraGafGym % aeJbaebaaiaawIcacaGLPaaaaaa!3F6C! $$ \left( {\bar 1\bar 1\bar 1} \right) $$ Sb planes of InSb substrates

Sh. O. Eminov, Kh. D. Jalilova and E. A. Mamedova
Inorganic Materials 47 (4) 340 (2011)
https://doi.org/10.1134/S0020168511040091

Cleaning method of InSb [1̄1̄1̄] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy

Gh Sareminia, F Zahedi, Sh Eminov and Ar Karamian
Journal of Semiconductors 32 (5) 056001 (2011)
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Characterization of photodiodes, made from a p-type epitaxial layer grown on n-type InSb<111>by LPE method

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Infrared Physics & Technology 53 (5) 315 (2010)
https://doi.org/10.1016/j.infrared.2010.05.003

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

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Interfacial Cleaning Effects in Passivating InSb with Al[sub 2]O[sub 3] by Atomic Layer Deposition

C. H. Hou, M. C. Chen, C. H. Chang, T. B. Wu and C. D. Chiang
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A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Hyoung-Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe and M. B. Santos
Applied Physics Letters 93 (6) (2008)
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Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb

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