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Cited article:

Cleaning InSb wafers for manufacturing InSb detectors

H. Simchi, Sh. Bahreani, M. H. Saani

Eur. Phys. J. Appl. Phys., 33 1 (2006) 1-4

Published online: 2006-01-18

DOI: https://doi.org/10.1051/epjap:2006001

This article has been cited by the following article(s):

Cleaning method of InSb [1̄1̄1̄] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy

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Journal of Semiconductors 32 (5) 056001 (2011)
DOI: 10.1088/1674-4926/32/5/056001
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Ar+ ion milling of InSb for manufacturing single electron devices

H. Simchi, M. Raastgoo, A. Ranjbar, et al.
Infrared Physics & Technology 52 (4) 113 (2009)
DOI: 10.1016/j.infrared.2009.04.001
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Current transport through InP/InSb heterojunction: Effect of lattice mismatch

Ravikant Sharma, Biplab Paul and P. Banerji
Applied Surface Science 256 (7) 2232 (2010)
DOI: 10.1016/j.apsusc.2009.09.081
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Wet chemical etching of the (111)In and % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXgatC % vAUfeBSjuyZL2yd9gzLbvyNv2CaeHbd9wDYLwzYbItLDharyavP1wz % ZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC0xbb % L8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yqaqpe % pae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabeqaam % aaeaqbaaGcbaWaaeWaaeaacuaIXaqmgaqeaiqbigdaXyaaraGafGym % aeJbaebaaiaawIcacaGLPaaaaaa!3F6C! $$ \left( {\bar 1\bar 1\bar 1} \right) $$ Sb planes of InSb substrates

Sh. O. Eminov, Kh. D. Jalilova and E. A. Mamedova
Inorganic Materials 47 (4) 340 (2011)
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Characterization of photodiodes, made from a p-type epitaxial layer grown on n-type InSb<111>by LPE method

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A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Hyoung-Sub Kim, I. Ok, M. Zhang, et al.
Applied Physics Letters 93 (6) 062111 (2008)
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InSb Photodiodes (Review, Part II)

A.V. Sukach
Optoèlektronika i poluprovodnikovaâ tehnika 51 (2016) 69 (2016)
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Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

M. Jaime-Vasquez, M. Martinka, A.J. Stoltz, et al.
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Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb

C. H. Hou, M. C. Chen, C. H. Chang, et al.
Journal of The Electrochemical Society 155 (9) G180 (2008)
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Passivation of InSb surface for manufacturing infrared devices

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Infrared Physics & Technology 51 (3) 263 (2008)
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Interfacial Cleaning Effects in Passivating InSb with Al[sub 2]O[sub 3] by Atomic Layer Deposition

C. H. Hou, M. C. Chen, C. H. Chang, T. B. Wu and C. D. Chiang
Electrochemical and Solid-State Letters 11 (6) D60 (2008)
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InSb Photodiodes (Review. Part V)

A.V. Sukach
Optoelektronìka ta napìvprovìdnikova tehnìka 54 51 (2020)
DOI: 10.15407/iopt.2019.54.051
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