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Interfacial Cleaning Effects in Passivating InSb with Al[sub 2]O[sub 3] by Atomic Layer Deposition
C. H. Hou, M. C. Chen, C. H. Chang, T. B. Wu and C. D. Chiang Electrochemical and Solid-State Letters 11(6) D60 (2008) https://doi.org/10.1149/1.2906129
A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer
Hyoung-Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe and M. B. Santos Applied Physics Letters 93(6) (2008) https://doi.org/10.1063/1.2972107
Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb
C. H. Hou, M. C. Chen, C. H. Chang, et al. Journal of The Electrochemical Society 155(9) G180 (2008) https://doi.org/10.1149/1.2948386