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Cited article:

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM

A. Armigliato, R. Balboni, S. Frabboni

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 49-54

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004132

This article has been cited by the following article(s):

Strain field reconstruction in shallow trench isolation structures by CBED and LACBED

A. Spessot, S. Frabboni, R. Balboni and A. Armigliato
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 253 (1-2) 149 (2006)
DOI: 10.1016/j.nimb.2006.10.052
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Direct strain measurement in a 65nm node strained silicon transistor by convergent-beam electron diffraction

Peng Zhang, Andrei A. Istratov, Eicke R. Weber, et al.
Applied Physics Letters 89 (16) 161907 (2006)
DOI: 10.1063/1.2362978
See this article