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All issues Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 313-316 Article references

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Thermal quenching of single localized excitons in GaInNAs layers

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Model of hopping excitons in GaInNAs: simulations of sharp lines in micro-photoluminescence spectra and their dependence on the excitation power and temperature

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Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms

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Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance

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Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

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Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

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Enhancement of the performance of GaP solar cells by embedded In(N)P quantum dots

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