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Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

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Crystal Research and Technology 55 (2) 1900053 (2020)
DOI: 10.1002/crat.201900053
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Quick mapping of carrier concentration in InP substrate with large diameter by near-infrared transmittance measurement

Tomohiro Kawase, Ryo Shiomi and Masayoshi Yamada
Materials Science in Semiconductor Processing 9 (1-3) 362 (2006)
DOI: 10.1016/j.mssp.2006.01.017
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Spectroscopic Analysis of Optoelectronic Semiconductors

Juan Jimenez and Jens W. Tomm
Springer Series in Optical Sciences, Spectroscopic Analysis of Optoelectronic Semiconductors 202 49 (2016)
DOI: 10.1007/978-3-319-42349-4_2
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Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

U. Künecke and P. J. Wellmann
The European Physical Journal Applied Physics 34 (3) 209 (2006)
DOI: 10.1051/epjap:2006055
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Homogeneity assessment of large-diameter III-V compound semiconductor substrates by near-infrared transmittance measurement

Yusuke Inoue, Takuya Kitamoto, Masayoshi Yamada and Tomohiro Kawase
physica status solidi (c) 4 (5) 1727 (2007)
DOI: 10.1002/pssc.200674258
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