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Cited article:
H. Mnif, Th. Zimmer, J. L. Battaglia, S. Fregonese
Eur. Phys. J. Appl. Phys., 25 1 (2004) 11-23
Published online: 2003-10-13
This article has been cited by the following article(s):
Calculation and analysis of thermal impedance of microelectronic structures from analytical models
S. Vintrou, N. Laraqi and A. Baïri
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DOI: 10.1016/j.sse.2011.07.014
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Obtaining Isothermal Data for HBT
S. Fregonese, T. Zimmer, H. Mnif, P. Baureis and C. Maneux
IEEE Transactions on Electron Devices 51 (7) 1211 (2004)
DOI: 10.1109/TED.2004.830636
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Thermal Impedance Modeling of Si–Ge HBTs From Low-Frequency Small-Signal Measurements
Amit Kumar Sahoo, Sébastien Fregonese, Thomas Zimmer and Nathalie Malbert
IEEE Electron Device Letters 32 (2) 119 (2011)
DOI: 10.1109/LED.2010.2091252
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A Study on Self-Heating and Mutual Thermal Coupling in SiGe Multi-Finger HBTs
A. D. D. Dwivedi, Rosario D’Esposito, Amit Kumar Sahoo, Sebastien Fregonese and Thomas Zimmer
Journal of Electronic Materials 45 (11) 5612 (2016)
DOI: 10.1007/s11664-016-4728-6
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Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors
Amit Kumar Sahoo, Mario Weiß, Sébastien Fregonese, Nathalie Malbert and Thomas Zimmer
Solid-State Electronics 74 77 (2012)
DOI: 10.1016/j.sse.2012.04.015
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Characterization of self-heating in Si–Ge HBTs with pulse, DC and AC measurements
Amit Kumar Sahoo, Sébastien Fregonese, Mario Weiß, et al.
Solid-State Electronics 76 13 (2012)
DOI: 10.1016/j.sse.2012.04.039
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Thermal impedance and transient temperature due to a spot of heat on a half-space
Najib Laraqi
International Journal of Thermal Sciences 49 (3) 529 (2010)
DOI: 10.1016/j.ijthermalsci.2009.10.004
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A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs
Amit Kumar Sahoo, Sébastien Fregonese, Mario Weis, Nathalie Malbert and Thomas Zimmer
IEEE Transactions on Electron Devices 59 (10) 2619 (2012)
DOI: 10.1109/TED.2012.2209651
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