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Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys
M. Ramírez-López, J.J. Cruz-Bueno, D. Flores-Ramírez, G. Villa-Martínez, R. Trejo-Hernández, L.M. Reséndiz-Mendoza, P. Rodríguez-Fragoso and Y.L. Casallas-Moreno Materials Science in Semiconductor Processing 173 108090 (2024) https://doi.org/10.1016/j.mssp.2023.108090
Investigation of the Lifetime and Dark Current in Absorbing Layers Based on Ternary Antimony Compounds
Theoretical Investigation of the Properties of Magnetic W-Doped InSb Using TB-mBJ Approximation
Drioua Mohamed, Badaoui Abdelhamid, Elkeurti Mohammed and Boudia Keltoum Russian Journal of Physical Chemistry A 98(12) 2810 (2024) https://doi.org/10.1134/S0036024424702054
Photodetectors Based on GalnAsSb/GaAlAsSb Heterostructures for the Practical Tasks of Precision Diode Laser Spectroscopy
E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, A. A. Pivovarova, N. D. Il’inskaya, Yu. P. Yakovlev, Ya. Ya. Ponurovskii, A. I. Nadezhdinskii, A. S. Kuz’michev, D. B. Stavrovskii and M. V. Spiridonov Semiconductors 57(7) 331 (2023) https://doi.org/10.1134/S1063782623090099
Temperature Dependence of Current in a InAsSb-Based p–n Photodiode
Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures
K. O. Boltar, A. A. Lopuhin, P. V. Vlasov and N. I. Iakovleva Journal of Communications Technology and Electronics 68(9) 1029 (2023) https://doi.org/10.1134/S1064226923090048
Lattice-matched heteroepitaxial preparation of InSb/CdTe on Si (111) substrate by magnetron sputtering
Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range
K. O. Boltar, N. I. Iakovleva, A. A. Lopukhin and P. V. Vlasov Journal of Communications Technology and Electronics 68(3) 316 (2023) https://doi.org/10.1134/S106422692303004X
Modern Photodetector IR-Modules
K. O. Boltar, I. D. Burlakov, N. I. Iakovleva, P. V. Vlasov and P. S. Lazarev Journal of Communications Technology and Electronics 67(9) 1175 (2022) https://doi.org/10.1134/S1064226922090030
Phase diagrams and critical temperatures for coherent and incoherent mixtures of InAs1−xSbx alloys using first-principles calculations
Masahiko Matsubara, Alexandros Kyrtsos and Enrico Bellotti Journal of Applied Physics 131(21) (2022) https://doi.org/10.1063/5.0087913
First Principles Study on Electronic Structure and Optical Properties of PMMA Doped InSb–Mn Alloy Polymer Matrix Composite
Dhanabalakrishnan Kovilpalayam Palaniswamy, Pandiyan Arumugan, Ravindiran Munusami, et al. Advances in Materials Science and Engineering 2022 1 (2022) https://doi.org/10.1155/2022/5814428
Growth and characterization of InAs/InP0.69Sb0.31 superlattice by MOCVD
Syntheses, characterizationsna and water-electrolysis properties of 2D α- and β-PdSeO3 bulk and nanosheet semiconductors
Yusheng Wu, Lin Wang, Hongyan Zhang, Jie Ding, Min Han, Min Fang, Jianchun Bao and Yong Wu Journal of Solid State Chemistry 297 122018 (2021) https://doi.org/10.1016/j.jssc.2021.122018
Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures
Natalya D. Il'inskaya, Sergey A. Karandashev, Al'bert A. Lavrov, Boris A. Matveev, Maxim A. Remennyi, Nicolay M. Stus’ and Anna A. Usikova physica status solidi (a) 215(7) (2018) https://doi.org/10.1002/pssa.201700694
In As1–x
Sb
x
heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
Lijuan Wang, Liyao Zhang, Li Yue, Dan Liang, Xiren Chen, Yaoyao Li, Pengfei Lu, Jun Shao and Shumin Wang Crystals 7(3) 63 (2017) https://doi.org/10.3390/cryst7030063
Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors
Mass-spectrometric monitoring of the thermally induced decomposition of trimethylgallium, tris(tert-butyl)gallium, and triethylantimony at low pressure conditions
Naoufal Bahlawane, Frank Reilmann, Linda-Christin Salameh and Katharina Kohse-Höinghaus Journal of the American Society for Mass Spectrometry 19(7) 947 (2008) https://doi.org/10.1016/j.jasms.2008.04.015
Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film