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All issues Eur. Phys. J. AP, 23 1 (2003) 5-9 Article references

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Annealing of defects in irradiated silicon detector materials with high oxygen content

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Journal of Physics: Condensed Matter 17 (22) S2247 (2005)
DOI: 10.1088/0953-8984/17/22/012
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Electrically active centers induced by electron irradiation in n-type si detectors

A. Ögmundsson, E.V. Monakhov, T.E. Hansen, J.K. Grepstad and B.G. Svensson
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 552 (1-2) 61 (2005)
DOI: 10.1016/j.nima.2005.06.007
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Surface states of wet chemically etched n-Si(111):H surfaces

S. Jakob and W. Schindler
Electrochimica Acta 88 659 (2013)
DOI: 10.1016/j.electacta.2012.10.138
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Electronic properties of hydrogen terminated n-Si (111)/electrolyte interface: Effect of saccharin addition

A. Chenna, L. Hamadou, N. Benbrahim, A. Kadri and S. Boudinar
Journal of Electroanalytical Chemistry 802 118 (2017)
DOI: 10.1016/j.jelechem.2017.08.053
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Divacancy annealing in Si: Influence of hydrogen

E. Monakhov, A. Ulyashin, G. Alfieri, et al.
Physical Review B 69 (15) 153202 (2004)
DOI: 10.1103/PhysRevB.69.153202
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Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

N. E. Grant, F. E. Rougieux, D. Macdonald, J. Bullock and Y. Wan
Journal of Applied Physics 117 (5) 055711 (2015)
DOI: 10.1063/1.4907804
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Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen

J. H. Bleka, H. Malmbekk, E. V. Monakhov, B. G. Svensson and B. S. Avset
Physical Review B 85 (8) 085210 (2012)
DOI: 10.1103/PhysRevB.85.085210
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Electrical properties of deuteron irradiated high resistivity silicon

Jerzy Krupka, Waldemar Karcz, Sergej P. Avdeyev, Paweł Kamiński and Roman Kozłowski
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DOI: 10.1016/j.nimb.2014.01.021
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Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si

E V Monakhov, G Alfieri, B S Avset, A Hallén and B G Svensson
Journal of Physics: Condensed Matter 15 (39) S2771 (2003)
DOI: 10.1088/0953-8984/15/39/001
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Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon

J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset and B. G. Svensson
Physical Review B 77 (7) 073206 (2008)
DOI: 10.1103/PhysRevB.77.073206
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H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

Chinhua Wang, Andreas Mandelis, Jordan Tolev, Bernd Burchard and Jan Meijer
Journal of Applied Physics 101 (12) 123109 (2007)
DOI: 10.1063/1.2748868
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Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

Ilia L. Kolevatov, Frank Herklotz, Viktor Bobal, Bengt Gunnar Svensson and Edouard V. Monakhov
Solid State Phenomena 242 163 (2015)
DOI: 10.4028/www.scientific.net/SSP.242.163
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Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon

Ilia L. Kolevatov, Philip M. Weiser, Eduard V. Monakhov and Bengt G. Svensson
physica status solidi (a) 216 (10) 1800670 (2019)
DOI: 10.1002/pssa.201800670
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