Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

This article has been cited by the following article(s):

Annealing of defects in irradiated silicon detector materials with high oxygen content

M Mikelsen, E V Monakhov, G Alfieri, et al.
Journal of Physics: Condensed Matter 17 (22) S2247 (2005)
DOI: 10.1088/0953-8984/17/22/012
See this article

Electrically active centers induced by electron irradiation in n-type si detectors

A. Ögmundsson, E.V. Monakhov, T.E. Hansen, J.K. Grepstad and B.G. Svensson
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 552 (1-2) 61 (2005)
DOI: 10.1016/j.nima.2005.06.007
See this article

Surface states of wet chemically etched n-Si(111):H surfaces

S. Jakob and W. Schindler
Electrochimica Acta 88 659 (2013)
DOI: 10.1016/j.electacta.2012.10.138
See this article

Electronic properties of hydrogen terminated n-Si (111)/electrolyte interface: Effect of saccharin addition

A. Chenna, L. Hamadou, N. Benbrahim, A. Kadri and S. Boudinar
Journal of Electroanalytical Chemistry 802 118 (2017)
DOI: 10.1016/j.jelechem.2017.08.053
See this article

Divacancy annealing in Si: Influence of hydrogen

E. Monakhov, A. Ulyashin, G. Alfieri, et al.
Physical Review B 69 (15) 153202 (2004)
DOI: 10.1103/PhysRevB.69.153202
See this article

Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

N. E. Grant, F. E. Rougieux, D. Macdonald, J. Bullock and Y. Wan
Journal of Applied Physics 117 (5) 055711 (2015)
DOI: 10.1063/1.4907804
See this article

Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen

J. H. Bleka, H. Malmbekk, E. V. Monakhov, B. G. Svensson and B. S. Avset
Physical Review B 85 (8) 085210 (2012)
DOI: 10.1103/PhysRevB.85.085210
See this article

Electrical properties of deuteron irradiated high resistivity silicon

Jerzy Krupka, Waldemar Karcz, Sergej P. Avdeyev, Paweł Kamiński and Roman Kozłowski
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 325 107 (2014)
DOI: 10.1016/j.nimb.2014.01.021
See this article

Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si

E V Monakhov, G Alfieri, B S Avset, A Hallén and B G Svensson
Journal of Physics: Condensed Matter 15 (39) S2771 (2003)
DOI: 10.1088/0953-8984/15/39/001
See this article

Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon

J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset and B. G. Svensson
Physical Review B 77 (7) 073206 (2008)
DOI: 10.1103/PhysRevB.77.073206
See this article

H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

Chinhua Wang, Andreas Mandelis, Jordan Tolev, Bernd Burchard and Jan Meijer
Journal of Applied Physics 101 (12) 123109 (2007)
DOI: 10.1063/1.2748868
See this article

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

Ilia L. Kolevatov, Frank Herklotz, Viktor Bobal, Bengt Gunnar Svensson and Edouard V. Monakhov
Solid State Phenomena 242 163 (2015)
DOI: 10.4028/www.scientific.net/SSP.242.163
See this article

Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon

Ilia L. Kolevatov, Philip M. Weiser, Eduard V. Monakhov and Bengt G. Svensson
physica status solidi (a) 216 (10) 1800670 (2019)
DOI: 10.1002/pssa.201800670
See this article