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Surface states of wet chemically etched n-Si(111):H surfaces

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Electronic properties of hydrogen terminated n-Si (111)/electrolyte interface: Effect of saccharin addition

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Divacancy annealing in Si: Influence of hydrogen

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Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

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Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen

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Electrical properties of deuteron irradiated high resistivity silicon

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Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si

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Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon

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H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

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Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

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Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon

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