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Cited article:

Electronic properties of two coupled Si δ-doped GaAs structures

E. Ozturk, H. Sari, Y. Ergun, I. Sokmen

Eur. Phys. J. AP, 21 2 (2003) 91-95

Published online: 2002-11-29

DOI: https://doi.org/10.1051/epjap:2002112

This article has been cited by the following article(s):

Intersubband optical absorption of double Si δ-doped GaAs layers

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Superlattices and Microstructures 35 (1-2) 95 (2004)
DOI: 10.1016/j.spmi.2004.02.020
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Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double -doped GaAs quantum wells

I. Rodriguez-Vargas, M.E. Mora-Ramos and C.A. Duque
Microelectronics Journal 39 (3-4) 438 (2008)
DOI: 10.1016/j.mejo.2007.07.022
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Intersubband transitions for single, double and triple Si -doped GaAs layers

Emine Ozturk and Ismail Sokmen
Journal of Physics D: Applied Physics 36 (20) 2457 (2003)
DOI: 10.1088/0022-3727/36/20/006
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Intersubband optical absorption in Siδ-doped GaAs for the donor distribution and thickness as dependent on the applied electric field

E. Ozturk and I. Sokmen
The European Physical Journal Applied Physics 25 (1) 3 (2004)
DOI: 10.1051/epjap:2003082
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The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer

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Solid State Communications 126 (11) 605 (2003)
DOI: 10.1016/S0038-1098(03)00301-6
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Influence of an applied electric field on the electronic properties of Siδ-doped GaAs

E. Ozturk, Y. Ergun, H. Sari and I. Sokmen
The European Physical Journal Applied Physics 24 (3) 189 (2003)
DOI: 10.1051/epjap:2003074
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The triple Si δ -doped GaAs structure

E. Ozturk, H. Sari, Y. Ergun and I. Sokmen
Applied Physics A 80 (1) 167 (2005)
DOI: 10.1007/s00339-003-2285-3
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Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type δ-doped GaAs structure

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DOI: 10.1016/j.optcom.2012.12.035
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Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field

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Journal of Luminescence 147 77 (2014)
DOI: 10.1016/j.jlumin.2013.10.057
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Tuning the linear and nonlinear optical properties in double and triple δ− doped GaAs semiconductor: Impact of electric and magnetic fields

H. Dakhlaoui and M. Nefzi
Superlattices and Microstructures 136 106292 (2019)
DOI: 10.1016/j.spmi.2019.106292
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