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Nonlinear and bistable reflection minima at λ = 106 μm in an attenuated total reflection configuration with a highly doped n-GaAs Film

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DOI: 10.1364/AO.42.001132
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CO[sub 2] laser induced temperature profiles in n-GaAs: An analytical model probed with the Seebeck effect

J. Stiens, W. Vandermeiren, C. De Tandt, et al.
Journal of Applied Physics 100 (11) 113120 (2006)
DOI: 10.1063/1.2399896
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Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Gennady Shkerdin, Sulaiman Rabbaa, Johan Stiens and Roger Vounckx
physica status solidi (b) 251 (4) 882 (2014)
DOI: 10.1002/pssb.201350039
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Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime

G Shkerdin, S Rabbaa, J Stiens and R Vounckx
Journal of Physics D: Applied Physics 45 (49) 495103 (2012)
DOI: 10.1088/0022-3727/45/49/495103
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Calculated temperature rise in midinfrared laser irradiated Hg0.72Cd0.28Te

Asta Katrine Storeboe, Trond Brudevoll and Knut Stenersen
Journal of Applied Physics 103 (5) 053108 (2008)
DOI: 10.1063/1.2890751
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Normal incidence infrared modulator based on single quantum well intersubband transitions

W Vandermeiren, J Stiens, G Shkerdin, C De Tandt and R Vounckx
Journal of Physics D: Applied Physics 47 (2) 025104 (2014)
DOI: 10.1088/0022-3727/47/2/025104
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Optimized attenuated total reflection configuration for free carrier induced optical nonlinearities in n-GaAs

G Shkerdin, J Stiens and R Vounckx
Semiconductor Science and Technology 19 (3) 291 (2004)
DOI: 10.1088/0268-1242/19/3/001
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The relationship between reflectivity minima and eigenmodes in multi-layer structures

G Shkerdin, J Stiens and R Vounckx
Journal of Optics A: Pure and Applied Optics 5 (4) 386 (2003)
DOI: 10.1088/1464-4258/5/4/314
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