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Cited article:

A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet

M. A. Grado-Caffaro, M. Grado-Caffaro

Eur. Phys. J. AP, 5 1 (1999) 1-2

Published online: 1999-01-15

DOI: https://doi.org/10.1051/epjap:1999106

This article has been cited by the following article(s):

A QUANTITATIVE STUDY ON TUNNELING CONDUCTIVITY OF A FLOATING-GATE MOSFET IN TERMS OF THE OXIDE-LAYER WIDTH

M. A. GRADO-CAFFARO and M. GRADO-CAFFARO
Modern Physics Letters B 19 (21) 1035 (2005)
DOI: 10.1142/S0217984905008943
See this article

Effect of the oxide thickness on the operation speed of a field-effect transistor in terms of the carrier tunneling rate

M. A. Grado-Caffaro and M. Grado-Caffaro
Technical Physics Letters 28 (12) 1030 (2002)
DOI: 10.1134/1.1535493
See this article