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A QUANTITATIVE STUDY ON TUNNELING CONDUCTIVITY OF A FLOATING-GATE MOSFET IN TERMS OF THE OXIDE-LAYER WIDTH

M. A. GRADO-CAFFARO and M. GRADO-CAFFARO
Modern Physics Letters B 19 (21) 1035 (2005)
DOI: 10.1142/S0217984905008943
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Effect of the oxide thickness on the operation speed of a field-effect transistor in terms of the carrier tunneling rate

M. A. Grado-Caffaro and M. Grado-Caffaro
Technical Physics Letters 28 (12) 1030 (2002)
DOI: 10.1134/1.1535493
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