Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
Eur. Phys. J. Appl. Phys., 72 1 (2015) 10102
Published online: 2015-09-30
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes
Fayssal Mekaret, Abdelaziz Rabehi, Baya Zebentout, Shahrazade Tizi, Abdelmalek Douara, Stefano Bellucci, Mawloud Guermoui, Zineb Benamara, El-Sayed M. El-kenawy, Marwa M. Eid and Amel Ali AlhussanAIP Advances 14 (11) (2024)
https://doi.org/10.1063/5.0240123
Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode
Abderrahmane Bekaddour, Abdelaziz Rabehi, Schahrazade Tizi, et al.Micro and Nanostructures 173 207464 (2023)
https://doi.org/10.1016/j.micrna.2022.207464
A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
Hicham Helal, Zineb Benamara, Elisabetta Comini, et al.The European Physical Journal Plus 137 (4) (2022)
https://doi.org/10.1140/epjp/s13360-022-02672-0
Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of current‐voltage
Hicham Helal, Zineb Benamara, Marwa Ben Arbia, Abdelaziz Rabehi, Abdallah Chabane Chaouche and Hassen MaarefInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields 34 (6) (2021)
https://doi.org/10.1002/jnm.2916
Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
A. Rabehi, B. Akkal, M. Amrani, et al.Semiconductors 55 (4) 446 (2021)
https://doi.org/10.1134/S1063782621040138
Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process
Arslane Hatem Kacha, Macho Anani, Boudali Akkal, et al.Journal of Alloys and Compounds 876 159596 (2021)
https://doi.org/10.1016/j.jallcom.2021.159596
Effect of the Ultra-Thin GaN Interlayer on the Electrical and Photoelectrical Parameters of Au|GaAs Schottky Barrier Diodes
A. H. Kacha, M. N. Amroun, B. Akkal and Z. BenamaraSemiconductors 55 (S1) S54 (2021)
https://doi.org/10.1134/S1063782621090086
Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range
Hicham Helal, Zineb Benamara, Mouhamed Amine Wederni, Sabrine Mourad, Kamel Khirouni, Guillaume Monier, Christine Robert-Goumet, Abdelaziz Rabehi, Arslane Hatem Kacha, Hicham Bakkali, Lionel C. Gontard and Manuel DominguezMaterials 14 (20) 5909 (2021)
https://doi.org/10.3390/ma14205909
A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range
Hicham Helal, Zineb Benamara, Marwa Ben Arbia, Abderrahim Khettou, Abdelaziz Rabehi, Arslane Hatem Kacha and Mohammed AmraniInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields 33 (4) (2020)
https://doi.org/10.1002/jnm.2714
A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters
Hicham Helal, Zineb Benamara, Benito González Pérez, et al.The European Physical Journal Plus 135 (11) (2020)
https://doi.org/10.1140/epjp/s13360-020-00916-5
Optimal Estimation of Schottky Diode Parameters Using Advanced Swarm Intelligence Algorithms
A. Rabehi, B. Nail, H. Helal, et al.Semiconductors 54 (11) 1398 (2020)
https://doi.org/10.1134/S1063782620110214
Low- and High-Frequency C–V Characteristics of Au/n-GaN/n-GaAs
Abderrezzaq Ziane, Mohamed Amrani, Abdelaziz Rabehi and Zineb BenamaraInternational Journal of Nanoscience 18 (06) 1850039 (2019)
https://doi.org/10.1142/S0219581X18500394
Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes
Hicham Helal, Zineb Benamara, Arslane Hatem Kacha, et al.Superlattices and Microstructures 135 106276 (2019)
https://doi.org/10.1016/j.spmi.2019.106276
Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode
Abderrezzaq Ziane, Mohammed Amrani, Zineb Benamara and Abdelaziz RabehiJournal of Electronic Materials 47 (9) 5283 (2018)
https://doi.org/10.1007/s11664-018-6408-1
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
A. Rabehi, M. Amrani, Z. Benamara, et al.Semiconductors 52 (16) 1998 (2018)
https://doi.org/10.1134/S106378261816025X
1 (2017)
https://doi.org/10.1109/ICEE-B.2017.8192119
Electrical and photoelectrical characteristics of Au/GaN/GaAs Schottky diode
A. Rabehi, M. Amrani, Z. Benamara, B. Akkal and A.H. KachaOptik 127 (16) 6412 (2016)
https://doi.org/10.1016/j.ijleo.2016.04.113