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A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

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The European Physical Journal Applied Physics 72 (3) 30102 (2015)
DOI: 10.1051/epjap/2015150375
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A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism

Linan Li, Wenqiang Ba, Wei Wang, Ling Li, Guangwei Xu, Lingfei Wang, Zhuoyu Ji, Congyan Lu and Writam Banerjee
Microelectronics Journal 86 1 (2019)
DOI: 10.1016/j.mejo.2019.02.002
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A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

M.X. Cai and R.H. Yao
Solid-State Electronics 141 23 (2018)
DOI: 10.1016/j.sse.2017.11.007
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