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Cited article:

A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism

Linan Li, Wenqiang Ba, Wei Wang, Ling Li, Guangwei Xu, Lingfei Wang, Zhuoyu Ji, Congyan Lu and Writam Banerjee
Microelectronics Journal 86 1 (2019)
https://doi.org/10.1016/j.mejo.2019.02.002

A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

Piao-Rong Xu and Ruo-He Yao
The European Physical Journal Applied Physics 72 (3) 30102 (2015)
https://doi.org/10.1051/epjap/2015150375