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Cited article:

Design of complementary LDMOS in 0.35 μm BiCMOS technology for smart integration

M. Abouelatta-Ebrahim, C. Gontrand, A. Zekry

Eur. Phys. J. Appl. Phys., 57 1 (2012) 10103

Published online: 2011-12-02

DOI: https://doi.org/10.1051/epjap/2011100138

This article has been cited by the following article(s):

Manukrishna V. R. and K. S. Nikhil
1 (2023)
https://doi.org/10.1109/ICITIIT57246.2023.10068623

Impact of TSV location in HVIC on CMOS operation: A mixed-mode TCAD simulation study

Mohamed Abouelatta, Ahmed Shaker and Christian Gontrand
Microelectronics Journal 75 113 (2018)
https://doi.org/10.1016/j.mejo.2018.03.008

Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study

Mohamed Abouelatta-Ebrahim, Ahmed Shaker, Gihan T. Sayah, Christian Gontrand and Abdelhalim Zekry
Ain Shams Engineering Journal 6 (2) 501 (2015)
https://doi.org/10.1016/j.asej.2014.12.003