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Cited article:

SiC-VJFETs power switching devices: an improved model and parameter optimization technique

T. Ben Salah, Y. Lahbib, H. Morel

Eur. Phys. J. Appl. Phys., 48 3 (2009) 30305

Published online: 2009-10-30

DOI: https://doi.org/10.1051/epjap/2009187

This article has been cited by the following article(s):

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 28 (3) 287 (2015)
DOI: 10.1002/jnm.2005
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Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes

Zhiyang Chen, Alexander E. Grekov, Ruiyun Fu, et al.
IEEE Transactions on Industry Applications 47 (4) 1853 (2011)
DOI: 10.1109/TIA.2011.2154296
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Silicon–carbide junction field effect transistor built-in diode: an experimentally verified electrical model

T.B. Salah, S. Khachroumi and H. Morel
IET Power Electronics 5 (8) 1389 (2012)
DOI: 10.1049/iet-pel.2010.0337
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Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

Aymen Ammouri, Walid Ben Salah, Sofiane Khachroumi, et al.
The European Physical Journal Applied Physics 66 (2) 20901 (2014)
DOI: 10.1051/epjap/2014130430
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Toward SiC-JFETs modelling with temperature dependence

T. Ben Salah, H. Morel and S. Mtimet
The European Physical Journal Applied Physics 52 (2) 20301 (2010)
DOI: 10.1051/epjap/2010139
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Modelling, analysis, and experimental study of SiC JFET body diode

T. Ben Salah, Y. Lahbib and H. Morel
The European Physical Journal Applied Physics 53 (1) 10301 (2011)
DOI: 10.1051/epjap/2010100172
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Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET

Sami Ghedira, Cyril Buttay, Hervé Morel and Kamel Besbes
The European Physical Journal Applied Physics 66 (2) 20103 (2014)
DOI: 10.1051/epjap/2014130533
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