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Cited article:

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

Sameh Mtimet, Walid Ben Salah, Tarek Ben Salah, Férid Kourda and Hervé Morel
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 28 (3) 287 (2015)
https://doi.org/10.1002/jnm.2005

Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

Aymen Ammouri, Walid Ben Salah, Sofiane Khachroumi, et al.
The European Physical Journal Applied Physics 66 (2) 20901 (2014)
https://doi.org/10.1051/epjap/2014130430

Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET

Sami Ghedira, Cyril Buttay, Hervé Morel and Kamel Besbes
The European Physical Journal Applied Physics 66 (2) 20103 (2014)
https://doi.org/10.1051/epjap/2014130533

Silicon–carbide junction field effect transistor built-in diode: an experimentally verified electrical model

T.B. Salah, S. Khachroumi and H. Morel
IET Power Electronics 5 (8) 1389 (2012)
https://doi.org/10.1049/iet-pel.2010.0337

Modelling, analysis, and experimental study of SiC JFET body diode

T. Ben Salah, Y. Lahbib and H. Morel
The European Physical Journal Applied Physics 53 (1) 10301 (2011)
https://doi.org/10.1051/epjap/2010100172

Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes

Zhiyang Chen, Alexander E. Grekov, Ruiyun Fu, et al.
IEEE Transactions on Industry Applications 47 (4) 1853 (2011)
https://doi.org/10.1109/TIA.2011.2154296

Toward SiC-JFETs modelling with temperature dependence

T. Ben Salah, H. Morel and S. Mtimet
The European Physical Journal Applied Physics 52 (2) 20301 (2010)
https://doi.org/10.1051/epjap/2010139