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Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices
A. Ashery, A. E. H. Gaballah and Mohamed A. Basyooni-M. Kabatas Physical Chemistry Chemical Physics 26(36) 23951 (2024) https://doi.org/10.1039/D4CP01965B
On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode
Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer
Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature
Şemsettin Altındal, Ahmet Faruk Özdemir, Şakir Aydoğan and Abdülmecit Türüt Journal of Materials Science: Materials in Electronics 33(15) 12210 (2022) https://doi.org/10.1007/s10854-022-08181-1
Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature
Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method
Havva Elif Lapa, Ali Kökce, Ahmet Faruk Özdemir and Şemsettin Altındal Zeitschrift für Physikalische Chemie 234(3) 505 (2020) https://doi.org/10.1515/zpch-2017-1091
Investigation of the electrical properties of diodes by crosschecking dependence on the presence of (nanocarbon-PVP) interface layer
Defect states assisted charge conduction in Au/MoO3–x/n-Si Schottky barrier diode
Somnath Mahato, Cristobal Voz, Debaleen Biswas, Satyaban Bhunia and Joaquim Puigdollers Materials Research Express 6(3) 036303 (2018) https://doi.org/10.1088/2053-1591/aaf49f
An evaluation of structural, optical and electrical characteristics of Ag/ZnO rods/SnO2/In–Ga Schottky diode
T. Küçükömeroğlu, S. Yılmaz, İ. Polat and E. Bacaksız Journal of Materials Science: Materials in Electronics 29(12) 10054 (2018) https://doi.org/10.1007/s10854-018-9049-5
Controlling the electrical characteristics of Au/n‐Si structure with and without (biphenyl‐CoPc) and (OHSubs‐ZnPc) interfacial layers at room temperature
Nalan Baraz, İbrahim Yücedağ, Ahmet Demir, Gülçin Ersöz, Şemsettin Altındal and Mehmet Kandaz Polymers for Advanced Technologies 28(8) 952 (2017) https://doi.org/10.1002/pat.3717
A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements