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Cited article:

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

M. Moret, S. Ruffenach, O. Briot, B. Gil

Eur. Phys. J. Appl. Phys., 45 2 (2009) 20305

Published online: 2009-01-31

DOI: https://doi.org/10.1051/epjap/2009007

This article has been cited by the following article(s):

Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

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DOI: 10.1016/j.jcrysgro.2012.07.040
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Room temperature growth of InxGa1−xN thin films by mixed source modified activated reactive evaporation

S.R. Meher, Kuyyadi P. Biju and Mahaveer K. Jain
Applied Surface Science 257 (20) 8623 (2011)
DOI: 10.1016/j.apsusc.2011.05.035
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Evolution of phase separation in In-rich InGaN alloys

B. N. Pantha, J. Li, J. Y. Lin and H. X. Jiang
Applied Physics Letters 96 (23) 232105 (2010)
DOI: 10.1063/1.3453563
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An approach to temperature-insensitive band gap - The InGaGdN case

Shuichi Emura, Siti-Nooraya Mohd-Tawil, Daivasigamani Krishnamurthy and Hajime Asahi
physica status solidi (b) 249 (3) 489 (2012)
DOI: 10.1002/pssb.201100336
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