| Issue |
Eur. Phys. J. Appl. Phys.
Volume 45, Number 2, February 2009
|
|
|---|---|---|
| Article Number | 20305 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2009007 | |
| Published online | 31 January 2009 | |
https://doi.org/10.1051/epjap/2009007
Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
Université Montpellier 2, Groupe d'Étude des Semiconducteurs, UMR-CNRS
5650, Case Courrier 74, 34095 Montpellier Cedex 5, France
Corresponding author: gil@ges.univ-montp2.fr
Received:
11
September
2008
Accepted:
11
December
2008
Published online:
31
January
2009
We report the growth of indium-rich InGaN alloys by metal-organic vapour phase epitaxy, using ammonia, trimethylgallium and trimethylindium as precursors. Compared to indium nitride, our alloy samples present substantial photoluminescence robustness with temperature. The analysis of the optical properties of these samples versus temperature indicates the existence of two non radiative recombination channels: one with a thermal activation temperature of 77 K and another one with an activation temperature ranging from 300 K for InN up to 640 K for In0.72Ga0.28N. The latter competes with the former at low temperatures whilst the former rules the optical properties at ambient conditions.
PACS: 78.20.-e – Optical properties of bulk materials and thin films / 78.55.-m – Photoluminescence, properties and materials / 71.55.Eq – III-V semiconductors
© EDP Sciences, 2009
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