Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Temperature-dependent electrical characteristics analysis of the Al/p-type Si structures with GO and PTCDA interlayer: structural properties

Niyazi Berk, Halil Seymen, Halil Özerli and Şükrü Karataş
Journal of Materials Science: Materials in Electronics 36 (7) (2025)
https://doi.org/10.1007/s10854-025-14491-x

Temperature-Dependent I–V Characteristics of Schottky Diodes: A Comprehensive Review of Barrier Height, Ideality Factor, and Series Resistance

Md Tohidul Islam and Hasan Efeoglu
Journal of Electronic Materials 54 (12) 10824 (2025)
https://doi.org/10.1007/s11664-025-12432-2

Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)

Hardhyan Sheoran, Janesh K. Kaushik and Rajendra Singh
Materials Science in Semiconductor Processing 165 107606 (2023)
https://doi.org/10.1016/j.mssp.2023.107606

Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

Mustafa A. M. Ahmed, W. E. Meyer and J. M. Nel
Journal of Materials Science: Materials in Electronics 34 (16) (2023)
https://doi.org/10.1007/s10854-023-10621-5

The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures

Niyazi Berk, Halil Seymen, İkram Orak and Şükrü Karataş
Journal of Physics and Chemistry of Solids 160 110348 (2022)
https://doi.org/10.1016/j.jpcs.2021.110348

Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface

Şükrü Karataş, Şemsettin Altındal, Murat Ulusoy, Y Azizian-Kalandaragh and Süleyman Özçelik
Physica Scripta 97 (9) 095816 (2022)
https://doi.org/10.1088/1402-4896/ac89bb

Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy

Sultan Alhassan, Daniele de Souza, Amra Alhassni, Amjad Almunyif, Saud Alotaibi, Abdulaziz Almalki, Maryam Alhuwayz, Igor P. Kazakov, Alexey V. Klekovkin, Vladimir I. Tsekhosh, Igor A. Likhachev, Elkhan.M. Pashaev, Sergio Souto, Yara Galvão Gobato, Noor Al Saqri, Helder Vinicius Avanço Galeti, Faisal Al mashary, Hind Albalawi, Norah Alwadai and Mohamed Henini
Journal of Alloys and Compounds 885 161019 (2021)
https://doi.org/10.1016/j.jallcom.2021.161019

Advances in Thin Films, Nanostructured Materials, and Coatings

S. V. Dukarov, S. I. Petrushenko, V. V. Miroshnychenko, O. O. Nevgasimov and V. N. Sukhov
Lecture Notes in Mechanical Engineering, Advances in Thin Films, Nanostructured Materials, and Coatings 297 (2019)
https://doi.org/10.1007/978-981-13-6133-3_29

Analysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contacts

Haziret Durmuş, Hamdi Şükür Kılıç, Serap Yiğit Gezgin and Şükrü Karataş
Silicon 10 (2) 361 (2018)
https://doi.org/10.1007/s12633-016-9456-2

The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range

Kadir Ejderha, Abdulkerim Karabulut, Nurettin Turkan and Abdulmecit Turut
Silicon 9 (3) 395 (2017)
https://doi.org/10.1007/s12633-016-9426-8

Electronic Transport of an Ni/n-GaAs Diode Analysed Over a Wide Temperature Range

A. Guzel, S. Duman, N. Yildirim and A. Turut
Journal of Electronic Materials 45 (6) 2808 (2016)
https://doi.org/10.1007/s11664-016-4342-7

Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy

N. Al Saqri, J.F. Felix, M. Aziz, D. Jameel, C.I.L. de Araujo, H. Albalawi, F. Al Mashary, H. Alghamdi, D. Taylor and M. Henini
Current Applied Physics 15 (10) 1230 (2015)
https://doi.org/10.1016/j.cap.2015.07.010

Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range

Necmi Biyikli, Abdulkerim Karabulut, Hasan Efeolu, Betul Guzeldir and Abdulmecit Turut
Physica Scripta 89 (9) 095804 (2014)
https://doi.org/10.1088/0031-8949/89/9/095804

Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts

Kadir Ejderha, N. Yıldırm and A. Turut
The European Physical Journal Applied Physics 68 (2) 20101 (2014)
https://doi.org/10.1051/epjap/2014140200

Barrier inhomogeneities in titanium Schottky contacts formed on argon plasma etched p-type Si0.95Ge0.05

M. Mamor, K. Bouziane and A. Tirbiyine
Journal of Materials Science: Materials in Electronics 25 (3) 1527 (2014)
https://doi.org/10.1007/s10854-014-1763-z

In Situ Integration of Squaraine-Nanowire-Array-Based Schottky-Type Photodetectors with Enhanced Switching Performance

Yuping Zhang, Wei Deng, Xiujuan Zhang, et al.
ACS Applied Materials & Interfaces 130809154412004 (2013)
https://doi.org/10.1021/am402087v

Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

Durmuş Ali Aldemir, Ali Kökce and Ahmet Faruk Özdemir
Microelectronic Engineering 98 6 (2012)
https://doi.org/10.1016/j.mee.2012.04.012

Temperature-dependent I-V characteristics in thermally annealed Co/p-InP contacts

K. Ejderha, N. Yıldırım, A. Türüt and B. Abay
The European Physical Journal Applied Physics 57 (1) 10102 (2012)
https://doi.org/10.1051/epjap/2011110221

Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Tuncay Tunç, Şemsettin Altindal, İbrahim Uslu, İlbilge Dökme and Habibe Uslu
Materials Science in Semiconductor Processing 14 (2) 139 (2011)
https://doi.org/10.1016/j.mssp.2011.01.018

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

Habibe Uslu, Şemsettin Altındal, İsmail Polat, Hatice Bayrak and Emin Bacaksız
Journal of Alloys and Compounds 509 (18) 5555 (2011)
https://doi.org/10.1016/j.jallcom.2011.02.033

Thermionic Field Emission Explanation for Nonlinear Richardson Plots

Crystal Kenney, Krishna C. Saraswat, Bill Taylor and Prashant Majhi
IEEE Transactions on Electron Devices 58 (8) 2423 (2011)
https://doi.org/10.1109/TED.2011.2156411

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Ö. Demircioglu, Ş. Karataş, N. Yıldırım, Ö.F. Bakkaloglu and A. Türüt
Journal of Alloys and Compounds 509 (22) 6433 (2011)
https://doi.org/10.1016/j.jallcom.2011.03.082

Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes

K. Ejderha, N. Yıldırım, A. Türüt and B. Abay
Superlattices and Microstructures 47 (2) 241 (2010)
https://doi.org/10.1016/j.spmi.2009.11.008

The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts

Nezir Yıldırım, Abdulmecit Turut and Veyis Turut
Microelectronic Engineering 87 (11) 2225 (2010)
https://doi.org/10.1016/j.mee.2010.02.007

Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts

K. Ejderha, N. Yıldırım, B. Abay and A. Turut
Journal of Alloys and Compounds 484 (1-2) 870 (2009)
https://doi.org/10.1016/j.jallcom.2009.05.062

A theoretical analysis together with experimental data of inhomogeneous Schottky barrier diodes

Nezir Yıldırım and Abdulmecit Türüt
Microelectronic Engineering 86 (11) 2270 (2009)
https://doi.org/10.1016/j.mee.2009.04.003