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Cited article:

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

M. Mosca, A. Castiglia, H.-J. Bühlmann, J. Dorsaz, E. Feltin, J.-F. Carlin, N. Grandjean

Eur. Phys. J. Appl. Phys., 43 1 (2008) 51-53

Published online: 2008-06-19

DOI: https://doi.org/10.1051/epjap:2008119

This article has been cited by the following article(s):

Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions

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Applied Physics Express 8 (6) 066502 (2015)
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Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

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Applied Physics Express 8 (4) 042701 (2015)
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High carrier injection for all-silicon laser

H. Toufik, W. Tazibt, N. Toufik, et al.
The European Physical Journal Applied Physics 58 (1) 10103 (2012)
https://doi.org/10.1051/epjap/2012110421