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Cited article:

An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects

T. Bentrcia, F. Djeffal and M. Chahdi
Microelectronics Reliability 53 (4) 520 (2013)
https://doi.org/10.1016/j.microrel.2012.12.005

ANFIS-based approach to studying subthreshold behavior including the traps effect for nanoscale thin-film DG MOSFETs

T. Bentrcia, F. Djeffal and E. Chebaaki
Journal of Semiconductors 34 (8) 084001 (2013)
https://doi.org/10.1088/1674-4926/34/8/084001

A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

M. A. Abdi, F. Djeffal, Z. Dibi and D. Arar
Journal of Computational Electronics 10 (1-2) 179 (2011)
https://doi.org/10.1007/s10825-010-0329-4

Analytical analysis of nanoscale fully depleted Double-Gate MOSFETs including the hot-carrier degradation effects

Z. Ghoggali and F. Djeffal
International Journal of Electronics 97 (2) 119 (2010)
https://doi.org/10.1080/00207210902894746

Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges

F. Djeffal, Z. Ghoggali, Z. Dibi and N. Lakhdar
Microelectronics Reliability 49 (4) 377 (2009)
https://doi.org/10.1016/j.microrel.2008.12.011