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Cited article:
A. K. Singh
Eur. Phys. J. Appl. Phys., 42 2 (2008) 87-94
Published online: 2008-04-29
This article has been cited by the following article(s):
8 articles
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ANFIS-based approach to studying subthreshold behavior including the traps effect for nanoscale thin-film DG MOSFETs
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A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs
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Analytical analysis of nanoscale fully depleted Double-Gate MOSFETs including the hot-carrier degradation effects
Z. Ghoggali and F. Djeffal International Journal of Electronics 97 (2) 119 (2010) https://doi.org/10.1080/00207210902894746
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Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges
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T. Bentrcia, F. Djeffal, M.A. Abdi, M. Chahdi and N. Boukhennoufa 1 (2009) https://doi.org/10.1109/ICSCS.2009.5412561