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Cited article:

Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

E. Ozturk, M. K. Bahar, I. Sokmen

Eur. Phys. J. Appl. Phys., 41 3 (2008) 195-200

Published online: 2008-03-12

DOI: https://doi.org/10.1051/epjap:2008018

This article has been cited by the following article(s):

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Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type δ-doped GaAs structure

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The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs

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Effect of Magnetic Field on a p-Type δ-Doped GaAs Layer

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The nonlocal dielectric function in the random phase approximation for n-type delta-doped quantum wells in GaAs

H. Rodríguez-Coppola, L. M. Gaggero-Sager, M. E. Mora-Ramos and R. Pérez-Álvarez
Journal of Applied Physics 108 (8) (2010)
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