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Cited article:

Post-annealed silicon nanocrystal formation on substoichiometric SiO_xN_y (x < 2, y < 1) layers deposited in SiH₄-N₂O radiofrequency discharges

M. Bedjaoui, B. Despax, M. Caumont, C. Bonafos

Eur. Phys. J. Appl. Phys., 34 2 (2006) 147-150

Published online: 2006-05-25

DOI: https://doi.org/10.1051/epjap:2006050

This article has been cited by the following article(s):

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Advanced Photonics Research 4 (8) (2023)
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Physico-chemical, structural and physical properties of hydrogenated silicon oxinitride films elaborated by pulsed radiofrequency discharge

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Thin Solid Films 518 (15) 4142 (2010)
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Strong white and blue photoluminescence from silicon nanocrystals in SiNxgrown by remote PECVD using SiCl4/NH3

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Nanotechnology 18 (15) 155704 (2007)
https://doi.org/10.1088/0957-4484/18/15/155704

Physicochemical and structural properties of ultra thin films with embedded silicon particles

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Surface and Coatings Technology 201 (22-23) 9179 (2007)
https://doi.org/10.1016/j.surfcoat.2007.04.006