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Cited article:

Polycrystalline silicon thin films prepared by Ni silicide induced crystallization and the dopant effects on the crystallization

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High Performance Poly-Si Thin Film Transistors Fabricated by a Simple Crystallization Method Using Ni-Silicide Seeds

Chang Woo Byun, Se Wan Son, Yong Woo Lee, et al.
Journal of The Electrochemical Society 158 (11) J354 (2011)
https://doi.org/10.1149/2.049111jes

Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source

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Acta Physica Sinica 59 (4) 2775 (2010)
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Development of polycrystalline silicon films on flexible metallic substrates by aluminium induced crystallization

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Applied Physics A 97 (1) 45 (2009)
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Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon

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Solid-State Electronics 52 (3) 482 (2008)
https://doi.org/10.1016/j.sse.2007.10.016

CW laser crystallization of amorphous silicon; dependence of amorphous silicon thickness and pattern width on the grain size

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Thin Solid Films 511-512 243 (2006)
https://doi.org/10.1016/j.tsf.2005.12.143

Selective crystallization of amorphous silicon thin film by a CW green laser

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Journal of Non-Crystalline Solids 352 (9-20) 993 (2006)
https://doi.org/10.1016/j.jnoncrysol.2005.10.070