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Cited article:
S. J. Park , S. H. Kang , Y. M. Ku , J. Jang
Eur. Phys. J. Appl. Phys., 31 3 (2005) 165-168
Published online: 2005-09-14
This article has been cited by the following article(s):
7 articles
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High Performance Poly-Si Thin Film Transistors Fabricated by a Simple Crystallization Method Using Ni-Silicide Seeds
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Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source
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Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon
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CW laser crystallization of amorphous silicon; dependence of amorphous silicon thickness and pattern width on the grain size
Seong Jin Park, Yu Mi Ku, Ki Hyung Kim, et al. Thin Solid Films 511-512 243 (2006) https://doi.org/10.1016/j.tsf.2005.12.143
Selective crystallization of amorphous silicon thin film by a CW green laser
Seong Jin Park, Yu Mi Ku, Eun Hyun Kim, Jin Jang, Ki Hyung Kim and Chae Ok Kim Journal of Non-Crystalline Solids 352 (9-20) 993 (2006) https://doi.org/10.1016/j.jnoncrysol.2005.10.070