Eur. Phys. J. Appl. Phys.
Volume 31, Number 3, September 2005
|Page(s)||165 - 168|
|Section||Semiconductors and Devices|
|Published online||14 September 2005|
High performance LTPS TFT with very large grains produced by sequential lateral crystallization
Advanced Display Research Center and Department of Physics, Kyung Hee
University, Dongdaemoon-ku, Seoul 130-701, Korea
Revised: 15 June 2005
Accepted: 7 July 2005
Published online: 14 September 2005
We report the structural and electrical properties of polycrystalline silicon on glass crystallized by using a CW Nd:YVO4 laser. Various microstructures appear on amorphous silicon after a scanning of the laser regardless of the crystallization process parameters such as laser power and scan speed. The crystallized region could be characterized by their grain size as 3 distinct regions; RTA-SPC (rapid thermal annealed-solid phase crystallization) region, small-grain region and SLC (sequential lateral crystallization) region with very large grains of ~10 μm. To verify its electrical properties, p-ch TFTs were fabricated on the 3 different regions. The characteristics of TFTs on SLC region were superior to those on other regions and average performances of SLC poly-Si TFTs were cm2/V s, V, S.S. = 0.5 V/dec, and pA/μm at V, respectively.
PACS: 85.30.Tv – Field effect devices / 68.47.Fg – Semiconductor surfaces / 68.35.Bs – Structure of clean surfaces (reconstruction) / 73.50.Dn – Low-field transport and mobility; piezoresistance
© EDP Sciences, 2005
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