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Cited article:

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Dislocation Dynamics in Monocrystalline Si near the Melting Point Studied in Situ by X‐Ray Bragg Diffraction Imaging

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Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon

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Electron‐Beam‐Induced Current and Deep‐Level Transient Spectroscopy Study of Dislocation Trails in Au‐Doped Si

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Cathodoluminescence and electron beam induced current investigations of stacking faults mechanically introduced in 4H-SiC in the brittle domain

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Effect of contamination with iron on the electron-beam-induced current contrast of extended defects in multicrystalline silicon

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TEM observations in Si: An attempt to link deformation microstructures and electrical activity

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EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth

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Comparative study of quantum efficiency of blue LED with different nanostructural arrangement

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