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Cited article:

Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

R Krukovskyi, Y Mykhashchuk, Y Kost, S Krukovskyi and I Saldan
Physica Scripta 92 (4) 045701 (2017)
https://doi.org/10.1088/1402-4896/aa64eb