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Cited article:

Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing

D. Klinger, J. Auleytner, D. Żymierska, B. Kozankiewicz, A. Barcz, L. Nowicki, A. Stonert

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 149-153

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004133

This article has been cited by the following article(s):

Surface morphology created by nanosecond laser annealing of amorphised Si layer—Investigations by complementary methods

D. Klinger, E. łusakowska, S. Kret, B. Kozankiewicz and D. Żymierska
Radiation Physics and Chemistry 80 (10) 1031 (2011)
https://doi.org/10.1016/j.radphyschem.2011.03.021