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Cited article:

Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa

V. V. Shchennikov, S. V. Gudina, A. Misiuk, S. N. Shamin, S. V. Ovsyannikov

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 145-148

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004131

This article has been cited by the following article(s):

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High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

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The effect of thermal treatments on the magnetic susceptibility of Czochralski‐grown n‐Si monocrystals

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Variations of high-pressure thermoelectric and mechanical properties of Si single crystals under doping with N and P–T pre-treatment

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Effect of hydrogen implantation on semiconductor–metal transition and high-pressure thermopower in Si

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Thermoelectric properties of hydrogen ion-irradiated silicon crystals under ultrahigh pressures of up to 20 GPa

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