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Cited article:

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

N. Kamata, H. Klausing, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya, Y. Arakawa

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 271-273

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004128

This article has been cited by the following article(s):

Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation

M. D. Haque, M. Julkarnain, A. Z. M. Touhidul Islam and N. Kamata
Advances in Materials Physics and Chemistry 08 (03) 143 (2018)
https://doi.org/10.4236/ampc.2018.83010

Nonradiative centers in Ba3Si6O12N2:Eu2+ phosphors observed by the below-gap excitation method

Tingting Li, Yousuke Kotuska, Takeshi Fukuda, Tomoyuki Kurushima and Norihiko Kamata
Materials Letters 145 158 (2015)
https://doi.org/10.1016/j.matlet.2015.01.054

Laser‐induced formation of nonradiative centers observed by two‐wavelength excited photoluminescence

H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
physica status solidi c 5 (9) 2929 (2008)
https://doi.org/10.1002/pssc.200779245