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Cited article:

Study of dislocations in strained-Si/Si_0.8Ge_0.2 heterostructures by EBIC, TEM and etching techniques

X. L. Yuan, T. Sekiguchi, S. G. Ri, S. Ito

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 337-340

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004119-7

This article has been cited by the following article(s):

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/SiGe/Si Heterostructures

Xin Chen, Daniel Zuo, Seongwon Kim, et al.
Microscopy and Microanalysis 20 (5) 1521 (2014)
https://doi.org/10.1017/S1431927614012963

Articles citing this article

Cited article:

Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques

This article has been cited by the following article(s):

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/SiGe/Si Heterostructures

Study of dislocations in strained-Si/Si_0.8Ge_0.2 heterostructures by EBIC, TEM and etching techniques