Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation
Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 111-114
Published online: 2004-07-15
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Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n-type silicon studied by isothermal deep-level transient spectroscopy
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