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Cited article:

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Zs. J. Horváth, L. K. Orlov, V. Rakovics, N. L. Ivina, A. L. Tóth, E. S. Demidov, F. Riesz, V. I. Vdovin, Z. Pászti

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 189-192

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004106

This article has been cited by the following article(s):

Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers

L. K. Orlov, Z. J. Horvath, M. L. Orlov, et al.
Physics of the Solid State 50 (2) 330 (2008)
https://doi.org/10.1134/S1063783408020194

Sub-pixel detection of a grid's node positions for optical diagnostics

I.E. Lukács and Ferenc Riesz
Thin Solid Films 516 (22) 8082 (2008)
https://doi.org/10.1016/j.tsf.2008.04.015

Electrical peculiarities in GaAs and Si based low dimensional structures

Zs.J. Horváth
Current Applied Physics 6 (2) 205 (2006)
https://doi.org/10.1016/j.cap.2005.07.041