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Cited article:
H. W. Kunert
Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 251-254
Published online: 2004-07-15
This article has been cited by the following article(s):
6 articles
Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments
Azusa N. Hattori, Ken Hattori, Yuta Moriwaki, et al. Japanese Journal of Applied Physics 53 (2) 021001 (2014) https://doi.org/10.7567/JJAP.53.021001
An accurate dual-expansion-point full-Brillouin-zone k⋅p model for wurtzite semiconductors
Alberto Marnetto, Michele Penna and Michele Goano Journal of Applied Physics 108 (3) 033701 (2010) https://doi.org/10.1063/1.3459883
Phonons in sapphire Al2O3 substrate for ZnO and GaN
H.W. Kunert, A.G.J. Machatine, A. Hoffmann, et al. Materials Science and Engineering: C 27 (5-8) 1222 (2007) https://doi.org/10.1016/j.msec.2006.08.014
Phonons and electronic states of ZnO, Al2O3and Ge in the presence of time reversal symmetry
A G J Machatine, H W Kunert, A Hoffmann, et al. Journal of Physics: Conference Series 92 012071 (2007) https://doi.org/10.1088/1742-6596/92/1/012071
Effects of time reversal symmetry on phonons in sapphire substrate for ZnO and GaN
H.W. Kunert, A. Hoffmann, A.G.J. Machatine, et al. Superlattices and Microstructures 42 (1-6) 278 (2007) https://doi.org/10.1016/j.spmi.2007.04.079
G. Davidson 197 (2007) https://doi.org/10.1039/b614703h