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Cited article:

Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments

Azusa N. Hattori, Ken Hattori, Yuta Moriwaki, et al.
Japanese Journal of Applied Physics 53 (2) 021001 (2014)
https://doi.org/10.7567/JJAP.53.021001

An accurate dual-expansion-point full-Brillouin-zone k⋅p model for wurtzite semiconductors

Alberto Marnetto, Michele Penna and Michele Goano
Journal of Applied Physics 108 (3) 033701 (2010)
https://doi.org/10.1063/1.3459883

Phonons and electronic states of ZnO, Al2O3and Ge in the presence of time reversal symmetry

A G J Machatine, H W Kunert, A Hoffmann, et al.
Journal of Physics: Conference Series 92 012071 (2007)
https://doi.org/10.1088/1742-6596/92/1/012071

Effects of time reversal symmetry on phonons in sapphire substrate for ZnO and GaN

H.W. Kunert, A. Hoffmann, A.G.J. Machatine, et al.
Superlattices and Microstructures 42 (1-6) 278 (2007)
https://doi.org/10.1016/j.spmi.2007.04.079