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Cited article:

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New strategy for the gene mutation identification using surface enhanced Raman spectroscopy (SERS)

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Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications

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Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods

Lei zhang, Yongliang Shao, Yongzhong Wu, Xiaopeng Hao, Xiufang Chen, Shuang Qu and Xiangang Xu
Journal of Alloys and Compounds 504 (1) 186 (2010)
https://doi.org/10.1016/j.jallcom.2010.05.085

The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

R. Lewandowska, J.L. Weyher, J.J. Kelly, L. Konczewicz and B. Lucznik
Journal of Crystal Growth 307 (2) 298 (2007)
https://doi.org/10.1016/j.jcrysgro.2007.07.019

DEFECT SELECTIVE ETCHING OF THICK AlN LAYERS GROWN ON 6H-SIC SEEDS – A TRANSMISSION ELECTRON MICROSCOPY STUDY

Luke Owuor Nyakiti, Jharna Chaudhuri, Ed A Kenik, Peng Lu and James H Edgar
MRS Proceedings 1040 (2007)
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Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates

M. Rudziński, E. Jezierska, J. L. Weyher, L. Macht, P. R. Hageman, J. Borysiuk, T. C. Rödle, H. F. F. Jos and P. K. Larsen
physica status solidi (a) 204 (12) 4230 (2007)
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Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

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Etching, Raman and PL study of thick HVPE-grown GaN

J.L. Weyher, R. Lewandowska, L. Macht, B. Lucznik and I. Grzegory
Materials Science in Semiconductor Processing 9 (1-3) 175 (2006)
https://doi.org/10.1016/j.mssp.2006.01.083