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Cited article:

Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers

V. D. Akhmetov, H. Richter, W. Seifert, O. Lysytskiy, R. Wahlich, T. Müller, M. Reiche

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 159-161

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004084

This article has been cited by the following article(s):

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A contribution to oxide precipitate nucleation in nitrogen doped silicon

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Oxygen Precipitation in Nitrogen Doped CZ Silicon

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FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure

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