Diminution of the activity of B atoms by H-induced defects in H2 and B2H6 co-implanted Si
Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 129-132
Published online: 2004-07-15
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon
A. V. Kabyshev, F. V. Konusov, G. E. Remnev and S. K. PavlovJournal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 8 (6) 1168 (2014)
https://doi.org/10.1134/S1027451014060068
Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation
A. V. Kabyshev, F. V. Konusov and G. E. RemnevRussian Physics Journal 56 (6) 607 (2013)
https://doi.org/10.1007/s11182-013-0075-8
H + ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
Chinhua Wang, Andreas Mandelis, Jordan Tolev, Bernd Burchard and Jan MeijerJournal of Applied Physics 101 (12) (2007)
https://doi.org/10.1063/1.2748868