Articles citing this article

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Cited article:

Synchrotron X-ray topography of supercritical-thickness strained silicon-on-insulator wafers for crystalline quality evaluation and electrical characterization using back-gate transistors

T. Shimura, D. Shimokawa, T. Matsumiya, et al.
Current Applied Physics 12 S69 (2012)
https://doi.org/10.1016/j.cap.2012.04.020

Characterization of strained Si wafers by X-ray diffraction techniques

Takayoshi Shimura, Kohta Kawamura, Masahiro Asakawa, et al.
Journal of Materials Science: Materials in Electronics 19 (S1) 189 (2008)
https://doi.org/10.1007/s10854-008-9641-1

Detection and Quantification of Surface Nanotopography-Induced Residual Stress Fields in Wafer-Bonded Silicon

Gavin Horn, Yong S. Chu, Yuncheng Zhong, et al.
Journal of The Electrochemical Society 155 (1) H36 (2008)
https://doi.org/10.1149/1.2799880

White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers

Kazunori Fukuda, Takayoshi Yoshida, Takayoshi Shimura, Kiyoshi Yasutake, Masataka Umeno and Satoshi Iida
Japanese Journal of Applied Physics 45 (9R) 6795 (2006)
https://doi.org/10.1143/JJAP.45.6795